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PA2423U
RangeChargerTM 2.4 GHz Bluetoothtm Power Amplifier IC Preliminary
Applications
Bluetoothtm wireless technology (Class 1) USB dongles PCMCIA, flash cards Access points 2.4 GHz cordless telephone
Product Description
A monolithic, high-efficiency, silicon-germanium power amplifier IC, the PA2423U is designed for 2.4 GHz wireless applications, including BluetoothTM Class1 and 2.4 GHz cordless telephone applications. It delivers +22.5 dBm output power making it capable of overcoming insertion losses of up to 2.5 dB between amplifier output and antenna input. The PA2423U provides a digital control input for controlling power up and power down modes of operation. The PA2423U operates at 3.3 V DC. At typical output power level (+22.5 dBm), the current consumption is 135 mA. The silicon/silicon-germanium structure of the PA2423U, and its exposed die-pad package, soldered to the system PCB, provide high thermal conductivity and a subsequently low junction temperature. This device is capable of operating at a duty cycle of 100 percent. The device is pin for pin compatible to the PA2423L.
Features
+22.5 dBm Output Power Low current 108 mA typical @ POUT = +20 dBm CMOS Enable Interface Power-control and power-down modes 3.3 V single supply operation Thin, lead-free 6 pin QFN package
Ordering Information
Part Number PA2423U PA2423U-R PA2423U-EV1 Package 6 pin QFN (0.5 mm height) 6 pin QFN (0.5 mm height) Evaluation Kit Remark Samples Tape & Reel
Functional Block Diagram
V
CT L
V
CC0
V
R A MP
Bias Generator
Control Circuitry
IN
Stage 1
Interstage Match
Stage 2
OUT/V C C 2
GND
V
CC1
GND
Figure 1: PA2423U Block Diagram
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Pin-Out Diagram
PA2423U TopView
OUT/V C C 2 OUT/V C C 2 6
PA2423U Bottom View
V C TL V R AMP
1 2
6
1 2
V C TL V R AMP
5 4
V CC1 V CC0
V CC1 V CC0
5 4
Die Pad
3
IN
Figure 2: PA2423U Pin-Out
Pin Out Description
Pin No. 1 2 3 4 5 6 Die Pad Name VCTL VRAMP IN VCC0 VCC1 OUT/VCC2 GND Description Controls the output level of the power amplifier. An analog control signal between 0 V and VCC varies the PA output power between minimum and maximum values Power Amplifier Enable pin. A digital control signal with logic high (power up) and logic low (power down) is used to turn the device on and off. Power amplifier RF input, external input matching network with DC blocking is required Bias supply voltage Stage 1 collector supply voltage, external inter-stage matching network is required PA Output and Stage2 collector supply voltage, external output matching network with DC blocking is required Heatslug Die Pad is ground
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RangeChargerTM 2.4 GHz Bluetoothtm Power Amplifier IC Preliminary
Absolute Maximum Ratings
Operation in excess of any one of above Absolute Maximum Ratings may result in permanent damage. This device is ESD sensitive. Handling and assembly of this device should be at ESD protected workstations.
Symbol VCC VCTL VRAMP IN TA TSTG Tj Supply Voltage Control Voltage Ramping Voltage RF Input Power
Parameter
Min. -0.3 -0.3 -0.3 -40 -40 -
Max. +3.6 VCC VCC +8 +85 +150 +150
Unit V V V dBm C C C
Operating Temperature Range Storage Temperature Range Maximum Junction Temperature
DC Electrical Characteristics
Conditions: Symbol VCC ICC Supply Voltage Supply Current (ICC = IVCC0 + IVCC1 + IVCC2), VCTL = 3.3 V, POUT_MAX 22.5 dBm Supply Current variation over temperature from TA = 25 C (-40 C < TA < +85 C) PA Output Power Control Voltage Range Current sunk by VCTL pin Logic High Voltage Logic Low Voltage Leakage Current when VRAMP = 0 V, No RF, VCTL = high VCC0 = VCC1 = VCC2 = VRAMP = VCTL = 3.3 V, PIN = 0 dBm, TA = 25 C, f = 2.45 GHz, input and output externally matched to 50 unless otherwise noted. Parameter Min. 2.7 Typ. 3.3 135 Max. 3.6 160 Unit V mA
IccTEMP VCTL ICTL VRAMP Istdby
0 2.0 -
25 200 0.5
VCC 250 0.8 10
% V A V V A
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RangeChargerTM 2.4 GHz Bluetoothtm Power Amplifier IC Preliminary
AC Electrical Characteristics
Conditions: Symbol fL-U POUT_MAX POUT_MIN Ptemp dPOUT /d VCTL GSS GVAR 2f 3f, IS21IOFF IS12I STAB VCC0 = VCC1 = VCC2 = VRAMP = VCTL = 3.3 V, PIN = 0 dBm TA = 25 C, f = 2.45 GHz, input and output externally matched to 50 unless otherwise noted. Parameter Frequency Range Output Power @ VCTL = 3.3 V Output Power @ VCTL = 0.4 V Output Power variation over temperature (-40 C < TA <+85 C) Control Voltage Sensitivity Gain @ PIN = -25 dBm Gain Variation over band (2400-2500 MHz) Harmonics Isolation in "OFF" State, VRAMP = 0 V Reverse Isolation Stability (PIN = 0 dBm, Load VSWR = 6:1) Min. 2400 20.0 25.5 15 32 Typ. 22.5 -20 1 28.5 0.2 -45 -40 36 42 Max. 2500 0 2 120 1.0 -30 -35 Unit MHz dBm dBm dB dBm/V dB dB dBc dB dB
All non-harmonically related outputs less than -50 dBc
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RangeChargerTM 2.4 GHz Bluetoothtm Power Amplifier IC Preliminary
Typical Performance Characteristics
Test Conditions: SiGe PA2423U-EV1: VCC0 = VCC1 = VCC2 = VRAMP = VCTL = 3.3 V, PIN = 0 dBm, TA = 25 C, f = 2.45 GHz, input and output externally matched to 50 unless otherwise noted
POUT vs. PIN over VCC (2.45 GHz)
3.3 V 30 25 2.7 V 3.6 V
0.17 0.15 0.13
ICC vs. PIN over VCC (2.45 GHz)
3.3 V 2.7 V 3.6 V
POUT (dBm)
20
ICC (A)
15 10 5 0 -24
0.11 0.09 0.07 0.05 -24
-22
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
2
-22
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
2
PIN (dBm)
PIN (dBm)
Efficiency vs PIN over VCC (2.45 GHz)
3.3V 50 45 40 2.7V 3.6V
23.5 23 22.5
Gain vs Frequency over VCC (PIN = 0 dBm)
3.3 V 2.7 V 3.6 V
Efficiency (%)
35 30 25 20 15 10 5 0 -30 -25 -20 -15 -10 -5 0 5 10
Gain (dB)
22 21.5 21 20.5 20 2.4 2.41 2.42 2.43 2.44 2.45 2.46 2.47 2.48 2.49 2.5
PIN (dBm)
Frequency (GHz)
POUT vs. VCTL over VCC (2.45 GHz)
3.3 V 30 25 20 2.7 V 3.6 V 0.16 0.14 0.12
I CC vs. VCTL over VCC (2.45 GHz)
3.3 V 2.7 V 3.6 V
POUT (dBm)
15
I CC (A)
0 0.5 1 1.5 2 2.5 3 3.5 4
10 5 0 -5 -10 -15 -20
0.1 0.08 0.06 0.04 0.02 0 0.5 0.75 1 1.25 1.5 1.75 2 2.25 2.5 2.75 3 3.25 3.5
VCTL (V)
VCTL (V)
Figure 3: PA2423U Typical Performance Characteristics
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Typical Performance Characteristics (Continued)
2Fo Harmonic vs POUT over VCC (2.45 GHz)
3.3 V -30 2.7 V 3.6 V -35
3Fo Harmonic vs. POUT over VCC (2.45 GHz)
3.3 V 2.7 V 3.6 V
3Fo Harmonic (dBc)
15 16 17 18 19 20 21 22 23 24 25
2Fo Harmonic (dBc)
-35 -40 -45 -50 -55 -60 -65 -70
-40 -45 -50 -55 -60 -65 15 16 17 18 19 20 21 22 23 24 25
POUT (dBm)
POUT (dBm)
Figure 4: PA2423U Typical Performance Characteristics (Continued)
Application Circuit
Figure 5 is a representation of the PA2423U application circuit. For a detailed schematic and layout, refer to SiGe's PA2523U-EK1 Evaluation Kit Data Sheet (Document Number: 131-DST-02).
To Antenna
Output Match OUT/ V CC2
VCC (3.3V)
FromBB/T ransceiverorT ietoV (3.3V) CC V C TL FromBB/T ransceiver V R AMP
1 2
2423U LotCode
3 IN
6 5 V CC 1 4 V CC0 Interstage
V CC (3.3V)
Input Match From T ransceiver
Figure 5: PA2423U Application Circuit
Branding Information
Figure 6 shows the branding for the PA2423U, including the Pin 1 location relative to the branding.
Part Number Pin 1
Lot Code
2423U Lot Code
Figure 6: PA2423U Branding Information
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RangeChargerTM 2.4 GHz Bluetoothtm Power Amplifier IC Preliminary
Tape and Reel Information
Table 1 and Figure 7 show the PA2423U tape and reel information. Parameter Reel Diameter Reel Width Units per Reel Value 7 inches 8 mm 3000
Table 1: PA2423U Tape and Reel Information
Figure 7: PA2423U Tape and Reel Diagram
Package Dimensions
The PA2423U is packaged in a 1.6 mm x 3.0 mm 6 pin QFN package, with a height of 0.5 mm. The detailed package drawing is shown in Figure 8. The underside of the package is an exposed die-pad structure. This allows for direct soldering to the PCB for enhanced thermal conductivity. The package dimensions are shown in the drawing below. The PA2423U is lead free.
Figure 8: PA2423U Package Drawing
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RangeChargerTM 2.4 GHz Bluetoothtm Power Amplifier IC Preliminary
Recommended Application PCB Footprint Layout
Figure 9 shows SiGe's recommended PA2423U Application PCB footprint.
RECOMMENDED FOOTPRINT QFN 6-PIN I/O 3.0X1.6 mm
1.0
Figure 9: PA2423U Recommended Application PCB Footprint
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RangeChargerTM 2.4 GHz Bluetoothtm Power Amplifier IC Preliminary
Applications Information
For test and design purposes, SiGe Semiconductor offers an evaluation board for the PA2423U. The order part number for the evaluation board is PA2423U-EV1. The evaluation board is intended to simplify the testing with respect to RF performance of this power amplifier. The application note, 131-DST-02 provides the supporting information for using the evaluation board. It contains information on the schematic, bill of materials and recommended layout for the power amplifier and the input and output matching networks. To assist in the design process, this layout is available, upon request, in gerber file format. Using VRAMP VRAMP is a digital pin used to power-up and power-down the PA2423U in time division duplex systems such as TM Bluetooth 1.1. During receive mode, VRAMP voltage is pulled down, PA2423U acts as a 35 dB isolation block between the radio and the antenna while consuming a modest 1 A. In transmit mode, VRAMP voltage is pulled to VCC and PA2423U offers 19 dB to 21 dB of large signal gain. Using VCTL VCTL is an analog pin that is designed to control the gain of PA2423U. Applying a voltage between 0 V and VCC will adjust the gain between -15 dB and 21 dB. Used in combination with a variable drive level to PA2423U, the VCTL TM function can greatly optimize the PAE of the system at all four Bluetooth transmitted power levels.
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RangeChargerTM 2.4 GHz Bluetoothtm Power Amplifier IC Preliminary
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Product Preview The datasheet contains information from the product concept specification. SiGe Semiconductor, Inc. reserves the right to change information at any time without notification. Preliminary Information The datasheet contains information from the design target specification. SiGe Semiconductor, Inc. reserves the right to change information at any time without notification. Production testing may not include testing of all parameters. Information furnished is believed to be accurate and reliable and is provided on an "as is" basis. SiGe Semiconductor, Inc. assumes no responsibility or liability for the direct or indirect consequences of use of such information nor for any infringement of patents or other rights of third parties, which may result from its use. No license or indemnity is granted by implication or otherwise under any patent or other intellectual property rights of SiGe Semiconductor, Inc. or third parties. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SiGe Semiconductor, Inc. products are NOT authorized for use in implantation or life support applications or systems without express written approval from SiGe Semiconductor, Inc. RangeCharger , StreamCharger , and PointCharger Copyright 2006 SiGe Semiconductor, Inc. All Rights Reserved
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are trademarks owned by SiGe Semiconductor, Inc.
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